ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,800, issued on July 14, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).
"Enhancement-mode switching device and preparation method therefor" was invented by Kai Cheng (Suzhou, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are an enhancement-mode switching device and a preparation method therefor. The enhancement-mode switching device includes: a substrate; a channel structure; an n-type semiconductor layer covering a bottom wall of the trench; a p-type semiconductor layer arranged in a gate region; a gate electrode arranged on a side, away from the substrate, of the p-type semiconductor layer; a source electrode arranged i...