US Patent Issued to ENKRIS SEMICONDUCTOR on Feb. 17 for "Semiconductor structure and manufacturing method therefor" (Chinese Inventor)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,349, issued on Feb. 17, was assigned to ENKRIS SEMICONDUCTOR INC. (Jiangsu, China).

"Semiconductor structure and manufacturing method therefor" was invented by Kai Cheng (Jiangsu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a manufacturing method therefor. In the semiconductor structure, a semiconductor substrate, a heterojunction and an in-situ insulation layer are disposed from bottom to top, a trench is provided in the in-situ insulation layer, and a transition layer is located on at least an in-situ insulation layer, the p-type semiconductor layer is located in the trench and...