US Patent Issued to ENKRIS SEMICONDUCTOR on April 14 for "Semiconductor structure and method for preparing semiconductor structure, film bulk acoustic resonator and method for preparing film bulk acoustic resonator" (Chinese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,628, issued on April 14, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China).

"Semiconductor structure and method for preparing semiconductor structure, film bulk acoustic resonator and method for preparing film bulk acoustic resonator" was invented by Kai Cheng (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a semiconductor structure and a method for preparing a semiconductor structure, a film bulk acoustic resonator and a method for preparing a film bulk acoustic resonator. The method for preparing a semiconductor structure according to the present application includes: growing a first nitride layer on a surface,...