ALEXANDRIA, Va., May 12 -- United States Patent no. 12,624,287, issued on May 12, was assigned to ENF TECHNOLOGY Co. LTD. (Gyeonggi-do, South Korea) and SK hynix Inc. (Gyeonggi-do, South Korea).

"Composition for the selective etching of silicon" was invented by Jeong Sik Oh (Gyeonggi-do, South Korea), Tae Ho Kim (Gyeonggi-do, South Korea), Gi young Kim (Gyeonggi-do, South Korea), Myung Ho Lee (Gyeonggi-do, South Korea), Myung Geun Song (Gyeonggi-do, South Korea), Pilgu Kang (Gyeonggi-do, South Korea), Youngmee Kang (Gyeonggi-do, South Korea) and Eunseok Oh (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Silicon etching compositions are described and may be used for selectively etchin...