US Patent Issued to EMEMORY TECHNOLOGY on Nov. 18 for "Manufacturing method for nonvolatile charge-trapping memory apparatus" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,739, issued on Nov. 18, was assigned to EMEMORY TECHNOLOGY INC. (Hsin-Chu, Taiwan).

"Manufacturing method for nonvolatile charge-trapping memory apparatus" was invented by Chun-Hsiao Li (Hsinchu County, Taiwan), Tsung-Mu Lai (Hsinchu County, Taiwan), Cheng-Yen Shen (Hsinchu County, Taiwan) and Chia-Jung Hsu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method for a nonvolatile charge-trapping memory apparatus is provided. During the manufacturing process of the nonvolatile memory apparatus, a blocking layer of a storage device is effectively protected. Consequently, the blocking layer is not contaminated or t...