ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,738, issued on Aug. 25, was assigned to eMemory Technology Inc. (Hsin-Chu, Taiwan).

"Voltage level shifter" was invented by Yu-Hsuan Cheng (Hsinchu County, Taiwan) and Sung-Ling Hsieh (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A voltage level shifter is provided. The voltage level shifter includes a main level shifter, a first bias level shifter and a second bias level shifter. The main level shifter includes a first N-type transistor and a second N-type transistor cross-coupled to each other, a third N-type transistor and a fourth N-type transistor controlled by a first bias voltage, a fifth N-type transistor and a sixth...