US Patent Issued to eMagin on Sept. 9 for "Monolithically integrated top-gate thin-film transistor and light-emitting diode and method of making" (New York Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,424, issued on Sept. 9, was assigned to eMagin Corp. (Hopewell Junction, N.Y.).

"Monolithically integrated top-gate thin-film transistor and light-emitting diode and method of making" was invented by Seonki Kim (Fishkill, N.Y.) and Amalkumar P. Ghosh (Hopewell Junction, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Pixels and sub-pixels suitable for high-density displays are disclosed. High-density is realized by forming a top-gate thin-film transistor (TFT) directly on top of a light-emitting diode (LED), thereby reducing the real estate required. To enable the stacked structure, a planarization layer is formed such that its top surface is c...