US Patent Issued to EBNER Industrieofenbau on Feb. 17 for "Method for growing single crystals" (Austrian, German Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,553,146, issued on Feb. 17, was assigned to EBNER Industrieofenbau GmbH (Leonding, Austria).

"Method for growing single crystals" was invented by Robert Ebner (Leonding, Austria), Kanaparin Ariyawong (Leonding, Austria), Ghassan Barbar (Neunkirchen, Germany) and Chih-Yung Hsiung (Leonding, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for growing single crystals, in particular silicon carbide single crystals, uses a device including a crucible, the crucible defining an outer surface and delimiting a receptacle having an axial extent between a bottom portion and an opening portion. The receptacle is designed for crystal growth and at le...