US Patent Issued to Dynax Semiconductor on Nov. 25 for "Epitaxial structure of semiconductor device and manufacturing method thereof and semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,340, issued on Nov. 25, was assigned to Dynax Semiconductor Inc. (Suzhou, China).

"Epitaxial structure of semiconductor device and manufacturing method thereof and semiconductor device" was invented by Hongtu Qian (Suzhou, China), Yi Pei (Suzhou, China) and Hui Zhang (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are an epitaxial structure of a semiconductor device, a manufacturing method, and a semiconductor device. The epitaxial structure includes a substrate and a semiconductor layer; the semiconductor layer includes a buffer layer; the buffer layer includes a first buffer subsection and a second buffer subsection which a...