ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,441, issued on May 19, was assigned to DISCO Corp. (Tokyo).
"Wafer processing method" was invented by Keiichiro Niitsu (Tokyo), Youngsuk Kim (Tokyo) and Koji Watanabe (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "First edge surface portions and second edge surface portions of first processed grooves and second processed grooves of a wafer are melted by being irradiated with a laser beam. Hence, top surfaces of the first edge surface portions and the second edge surface portions can be planarized, and damage caused to the first edge surface portions and the second edge surface portions can be repaired. As a result, the transverse rupture stren...