US Patent Issued to DISCO on Aug. 18 for "Method of processing SiC wafer" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,861, issued on Aug. 18, was assigned to DISCO Corp. (Tokyo).

"Method of processing SiC wafer" was invented by Akifumi Suzuki (Tokyo) and Junichi Kuki (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of processing an SiC wafer includes a laser processing step of applying a laser beam to the SiC wafer along projected dicing lines established thereon to sever a metal film on the SiC wafer along the projected dicing lines and form grooves in the SiC wafer along the projected dicing lines, a tape mounting step of mounting a tape on the metal film before or after the laser processing step, and a dividing step of gripping, vertically between ...