US Patent Issued to Diodes on Sept. 9 for "Method of fabricating a semiconductor structure" (Chinese, American, Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,341, issued on Sept. 9, was assigned to Diodes Inc. (Plano, Texas).

"Method of fabricating a semiconductor structure" was invented by Tao Long (Shanghai), Pin-Hao Huang (Taipei, Taiwan) and Ze Rui Chen (Milpitas, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor structure forming a first diffusion layer on a first electrode layer and forming a core layer over the first diffusion layer. A second diffusion layer is formed over the core layer. A plurality of diffusion regions are formed in the second diffusion layer. A second electrode layer is formed over the second diffusion layer and in contact with the...