US Patent Issued to DENSO on March 17 for "Semiconductor device with metal film on semiconductor substrate and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,716, issued on March 17, was assigned to DENSO Corp. (Kariya-city, Japan).

"Semiconductor device with metal film on semiconductor substrate and method of manufacturing the same" was invented by Seiji Noma (Kariya-city, Japan), Tomofusa Shiga (Kariya-city, Japan), Kouji Senda (Kariya-city, Japan), Tsuyoshi Nishiwaki (Toyota, Japan), Yuta Furumura (Toyota, Japan) and Akitaka Soeno (Kariya-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate and a metal film. The metal film is located on the semiconductor substrate. The metal film includes a portion to have a Schottky junction with the se...