US Patent Issued to DENSO on July 28 for "Semiconductor device and method for manufacturing the semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,825, issued on July 28, was assigned to DENSO Corp. (Kariya-city, Japan).

"Semiconductor device and method for manufacturing the semiconductor device" was invented by Tomohito Iwashige (Kariya-city, Japan) and Takeshi Endo (Kariya-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Joining a second supporting member to one surface of a semiconductor chip through an upper layer joining portion includes: forming, on the one surface, a pre-joining layer by pressure-sintering a first constituent member containing a sintering material on the one surface such that spaces between the plurality of protrusions are filled with the pre-joining layer and...