US Patent Issued to DENSO on Jan. 20 for "Silicon carbide semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,503, issued on Jan. 20, was assigned to DENSO Corp. (Kariya, Japan).

"Silicon carbide semiconductor device" was invented by Shinichiro Miyahara (Kariya, Japan) and Shoji Mizuno (Kariya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device includes a substrate, a drift layer, a base layer, a first electrode, and a second electrode. The substrate includes a cell region at which a semiconductor element is disposed and a temperature detection region at which a diode element is disposed. The first electrode is disposed at a side facing the substrate with the drift layer sandwiched between the substrate and the first...