US Patent Issued to DENSO on Dec. 2 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,484, issued on Dec. 2, was assigned to DENSO Corp. (Kariya, Japan).

"Semiconductor device" was invented by Emika Abe (Kariya, Japan), Takuo Nagase (Kariya, Japan), Ryota Miwa (Kariya, Japan) and Tomoo Morino (Kariya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor element configured to form an upper-lower arm circuit of a power conversion device. The semiconductor element includes a control electrode, a high-potential electrode and a low-potential electrode. A parasitic capacitance between the control electrode and the high-potential electrode changes according to a potential difference between the...