US Patent Issued to DENSO on Aug. 25 for "Method of manufacturing silicon carbide substrate, silicon carbide single-crystal substrate and silicon carbide semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,830, issued on Aug. 25, was assigned to DENSO Corp. (Aichi, Japan).

"Method of manufacturing silicon carbide substrate, silicon carbide single-crystal substrate and silicon carbide semiconductor device" was invented by Takashi Sakurada (Osaka, Japan), Taro Nishiguchi (Osaka, Japan), Tetsuro Kondo (Osaka, Japan), Naoki Matsumoto (Osaka, Japan), Makoto Sasaki (Osaka, Japan) and Hirofumi Yamamoto (Osaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a silicon carbide semiconductor device includes the following steps. In a silicon carbide substrate including a silicon carbide single-crystal substrate and a silicon carbid...