US Patent Issued to DENSO, TOYOTA JIDOSHA, MIRISE Technologies on Oct. 6 for "Silicon carbide single crystal manufacturing apparatus, computing device, and manufacturing method of silicon carbide single crystal" (Japanese Inventor)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,753,528, issued on Oct. 6, was assigned to DENSO Corp. (Kariya-city, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. (Nisshin, Japan).

"Silicon carbide single crystal manufacturing apparatus, computing device, and manufacturing method of silicon carbide single crystal" was invented by Daisuke Uematsu (Nisshin, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide single crystal manufacturing apparatus includes a pressure sensor and a computing device. The pressure sensor is configured to measure a gas pressure of a supply gas containing a silicon carbide raw material gas and introduced into a crucible through a ...