ALEXANDRIA, Va., May 26 -- United States Patent no. 12,642,014, issued on May 26, was assigned to DENSO Corp. (Kariya-city, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. (Nisshin, Japan).
"Silicon carbide wafer manufacturing apparatus" was invented by Hiroaki Fujibayashi (Nisshin, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "In a silicon carbide wafer manufacturing apparatus, a cooling unit is capable of cooling a separation space to 400deg C. or lower, and a supply pipe includes a dopant gas supply pipe through which an ammonia-based gas included in a reactant gas is to be supplied, a growth gas supply pipe through which a growth gas containing a silane-based gas and a ch...