US Patent Issued to DENSO, TOYOTA JIDOSHA, MIRISE Technologies on Feb. 17 for "Semiconductor device and manufacturing method of semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,334, issued on Feb. 17, was assigned to DENSO Corp. (Kariya, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. (Nisshin, Japan).

"Semiconductor device and manufacturing method of semiconductor device" was invented by Yohei Iwahashi (Nisshin, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a gate extraction portion extracted from a gate electrode and extending from an active region to an outer peripheral region so as to be disposed above an end portion of a field insulating film. The end portion of the gate field insulating film above which the gate extraction portion is disposed is incline...