US Patent Issued to DENSO, TOYOTA JIDOSHA, MIRISE Technologies on Dec. 16 for "Method of forming grooves and vertical cracks in a wafer comprising individual semiconductor elements to separate the semiconductor elements by cleaving the wafer along the grooves and the vertical cracks" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,712, issued on Dec. 16, was assigned to DENSO Corp. (Kariya, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. (Nisshin, Japan).

"Method of forming grooves and vertical cracks in a wafer comprising individual semiconductor elements to separate the semiconductor elements by cleaving the wafer along the grooves and the vertical cracks" was invented by Fumihito Tachibana (Nisshin, Japan), Masashi Uecha (Nisshin, Japan) and Yuji Nagumo (Nisshin, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a manufacturing method of a semiconductor device, a wafer in which multiple semiconductor elements is formed and having a first sur...