ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,848, issued on Aug. 25, was assigned to DENSO Corp. (Kariya-city, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. (Nisshin, Japan).

"Semiconductor device and method for manufacturing the semiconductor device" was invented by Takaya Shimono (Nisshin, Japan) and Yohei Iwahashi (Nisshin, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an element region having a gate switching element, and a temperature sensing region having a temperature sensing diode. The gate switching element in the element region includes gate trenches, gate electrodes and an interlayer insulating layer covering an uppe...