US Patent Issued to DENSO, TOYOTA JIDOSHA, MIRISE Technologies on Aug. 18 for "Silicon carbide single crystal and manufacturing method of silicon carbide single crystal" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,709,818, issued on Aug. 18, was assigned to DENSO Corp. (Kariya-city, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. (Nisshin, Japan).

"Silicon carbide single crystal and manufacturing method of silicon carbide single crystal" was invented by Nobuyuki Oya (Nisshin, Japan), Takeshi Okamoto (Nisshin, Japan) and Akiyoshi Horiai (Nisshin, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide single crystal includes a region in which a change of a specific resistance is repeated in a growth direction of the silicon carbide single crystal, and the change of the specific resistance is a gradual increase and decrease ...