US Patent Issued to DENSO, TOYOTA JIDOSHA, MIRISE Technologies on April 21 for "Method of manufacturing nitride semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,756, issued on April 21, was assigned to DENSO Corp. (Kariya-city, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. (Nisshin, Japan).

"Method of manufacturing nitride semiconductor device" was invented by Takashi Okawa (Nisshin, Japan) and Kenta Watanabe (Nisshin, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method of a nitride semiconductor device includes: introducing a p type impurity into at least a part of an upper layer portion of a first nitride semiconductor layer to form a p type impurity introduction region; forming a second nitride semiconductor layer from an upper surface of the first nit...