ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,453, issued on Dec. 23, was assigned to DENSO Corp. (Kariya, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan), MIRISE Technologies Corp. (Nisshin, Japan) and National University Corporation Tokai National Higher Education and Research System (Nagoya, Japan).
"Semiconductor device and manufacturing method of semiconductor device" was invented by Seiya Hasegawa (Nisshin, Japan), Takashi Ushijima (Nisshin, Japan), Takashi Ishida (Nisshin, Japan), Shoichi Onda (Nagoya, Japan), Chiaki Sasaoka (Nagoya, Japan) and Jun Kojima (Nagoya, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a gallium nitride substrate and a pattern fi...