US Patent Issued to DB HiTek on May 19 for "High voltage semiconductor device and method of manufacturing same" (South Korean Inventor)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,489, issued on May 19, was assigned to DB HiTek Co. Ltd. (Bucheon-si, South Korea).

"High voltage semiconductor device and method of manufacturing same" was invented by Jong Won Sun (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Proposed is a high voltage semiconductor device and a method of manufacturing the same and, more particularly, a high voltage semiconductor device and a method of manufacturing the same, which allow the upper end of an air gap or void formed in a DTI region to be positioned relatively deep in a substrate by forming a wide region with a relatively wide lateral width on the upper part of the DTI region, ...