US Patent Issued to DB HiTek on July 21 for "High voltage semiconductor device and method of manufacturing same" (South Korean Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,225, issued on July 21, was assigned to DB HiTek Co. Ltd. (Bucheon-si, South Korea).

"High voltage semiconductor device and method of manufacturing same" was invented by Jong Min Kim (Seoul, South Korea) and Geum Ho Ahn (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a high voltage semiconductor device and a method of manufacturing the same and, more particularly, a high voltage semiconductor device and a method of manufacturing the same enabling more effective integration through improvement of breakdown voltage (BV) characteristics during device turn-on and/or turn-off and consequent improvement of specific on-resis...