US Patent Issued to DB HiTek on July 14 for "RF switch device and method of manufacturing same" (South Korean Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,177, issued on July 14, was assigned to DB HiTek Co. Ltd. (Bucheon-si, South Korea).

"RF switch device and method of manufacturing same" was invented by Hyun Jin Kim (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An RF switch device and a method of manufacturing the same deplete the lower region of the device to reduce coupling with a substrate and thereby improve RF characteristics by forming a depletion control region surrounding source and drain regions to control a depletion region while protecting a channel region within an active region where well regions such as PW and DNW are not formed."

The patent was filed on Oct. 19,...