US Patent Issued to DB HITEK on Feb. 17 for "Pillar structure and super junction semiconductor device including the same" (South Korean Inventor)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,329, issued on Feb. 17, was assigned to DB HITEK Co. LTD. (Seoul, South Korea).

"Pillar structure and super junction semiconductor device including the same" was invented by Jong Hwan Ko (Incheon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A circular LDMOS device includes a lower drift layer disposed on a substrate, a drain region disposed on the lower drift layer, a source region having a circular ring shape surrounding the drain region and spaced apart from the drain region, a field insulating layer disposed between the drain region and the source region, and an upper drift layer disposed between the lower drift layer and the field...