US Patent Issued to Dalian University of Technology, NingBo Inst. of Dalian University of Technology on April 7 for "Method for preparing a P-type ZrCoSb-based half-Heusler single crystal alloy with a chemical composition of ZrCoSb1-xSnx by vertical bridgman directional crystallization" (Chinese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,595,583, issued on April 7, was assigned to Dalian University of Technology (Dalian City, China) and NingBo Inst. of Dalian University of Technology (Ningbo City, China).

"Method for preparing a P-type ZrCoSb-based half-Heusler single crystal alloy with a chemical composition of ZrCoSb1-xSnx by vertical bridgman directional crystallization" was invented by Huijun Kang (Dalian City, China), Rongchun Chen (Dalian City, China), Tongmin Wang (Dalian City, China), Enyu Guo (Dalian City, China), Zongning Chen (Dalian City, China), Tingju Li (Dalian City, China), Zhiqiang Cao (Dalian City, China), Yiping Lu (Dalian City, China), Jinchuan Jie (Dalian City, China) and Yubo Zhang (Dalian City, ...