US Patent Issued to CXMT on Nov. 3 for "Memory device and control method therefor" (Chinese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,867, issued on Nov. 3, was assigned to CXMT Corp. (Hefei, China).

"Memory device and control method therefor" was invented by Zequn Huang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a memory device, including a cyclic redundancy check (CRC) circuit, configured to indicate whether a CRC error has been detected from data transmission between a host device and the memory device. The cyclic redundancy check (CRC) circuit includes: a detection module, configured to generate a CRC signal to correspondingly indicate that N CRC errors have been detected from the data transmission between the host device and the memory device, wh...