US Patent Issued to CSMC TECHNOLOGIES FAB2 on Oct. 27 for "Semiconductor device and preparation method therefor" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,673, issued on Oct. 27, was assigned to CSMC TECHNOLOGIES FAB2 Co. LTD. (Wuxi, China).

"Semiconductor device and preparation method therefor" was invented by Huajun Jin (Wuxi, China), Liang Song (Wuxi, China), Yongshun Li (Wuxi, China), Mei Yuan (Wuxi, China), Yanan Wang (Wuxi, China), Lin Luo (Wuxi, China) and Qiang Zhang (Wuxi, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure involves a semiconductor device and a manufacturing method thereof. A second well region is inserted between first well regions of a semiconductor device to improve the breakdown voltage of the device, and at the same time, the dimension of the uppe...