US Patent Issued to CSMC TECHNOLOGIES FAB2 on March 31 for "Method for manufacturing semiconductor device, and semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,465, issued on March 31, was assigned to CSMC TECHNOLOGIES FAB2 Co. LTD. (Jiangsu, China).

"Method for manufacturing semiconductor device, and semiconductor device" was invented by Huajun Jin (Wuxi, China), Guipeng Sun (Wuxi, China), Feng Lin (Wuxi, China) and Shuxian Chen (Wuxi, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device, and a semiconductor device. The method includes: providing a semiconductor substrate of a first conductivity type, forming a deep well of a second conductivity type in the semiconductor substrate, forming a channel region of the first conductivity type, a first well regi...