US Patent Issued to CRRC INDUSTRIAL INSTITUTE on June 23 for "Graphene copper composite material preparation method based on combination of hot pressing sintering and chemical vapor deposition" (Chinese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,661,868, issued on June 23, was assigned to CRRC INDUSTRIAL INSTITUTE CORPORATION LIMITED (Beijing).

"Graphene copper composite material preparation method based on combination of hot pressing sintering and chemical vapor deposition" was invented by Juncai Liang (Beijing), Xiaohui Zhang (Beijing), Minggao Li (Beijing), Zhongzheng Pei (Beijing), Baishan Liu (Beijing), Yalun Wang (Beijing), Chaozhong Chen (Beijing) and Meiyu Sun (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A graphene copper composite material preparation method based on a combination of hot pressing sintering and chemical vapor deposition, comprising: presetting multi-layer cop...