US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on Sept. 8 for "Process for fabricating an optoelectronic device comprising a step of producing a thin conductive layer conformally and continuously by directional deposition" (French Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,290, issued on Sept. 8, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"Process for fabricating an optoelectronic device comprising a step of producing a thin conductive layer conformally and continuously by directional deposition" was invented by Ludovic Dupre (Grenoble Cedex, France) and Helene Fournier (Grenoble Cedex, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing an optoelectronic device comprising a substrate and wire diodes having an h:d spacing aspect ratio that is at least equal to 1, the method comprising a step of producing a conductive thin film by directional phy...