US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on Sept. 22 for "Integration structure for connecting a plurality of semiconductor devices, associated methods, assembly and system" (French Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,657, issued on Sept. 22, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"Integration structure for connecting a plurality of semiconductor devices, associated methods, assembly and system" was invented by Jean Charbonnier (Grenoble Cedex, France), Edouard Deschaseaux (Grenoble Cedex, France) and Candice Thomas (Grenoble Cedex, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integration structure for connecting a plurality of semiconductor devices, includes a substrate, a first face and a second face for receiving the semiconductor devices. At the first surface, at least one routing level includes at...