US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on Oct. 27 for "Method for manufacturing a growth substrate including mesas of various deformabilities, by etching and electrochemical porosification" (French Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,743, issued on Oct. 27, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"Method for manufacturing a growth substrate including mesas of various deformabilities, by etching and electrochemical porosification" was invented by Fabian Rol (Grenoble, France) and Amelie Dussaigne (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a growth substrate adapted to produce by epitaxy a matrix of diodes based on InGaN, including the following steps of: producing a crystalline stack including, from a conductive buffer layer: a lower layer based on doped GaN; then a separation interme...