US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on Oct. 20 for "Device and method for characterizing the current collapse of GaN transistors" (French Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,768,874, issued on Oct. 20, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"Device and method for characterizing the current collapse of GaN transistors" was invented by Van-Sang Nguyen (Grenoble Cedex, France), Anthony Bier (Grenoble Cedex, France) and Stephane Catellani (Grenoble Cedex, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device for evaluating a dynamic resistance in a conducting state of a GaN-based transistor. The device including a test circuit provided with a circuit, the GaN-based transistor, forming an arm of the circuit, the device being provided with a stage for controlling the switc...