US Patent Issued to Commissariat a l'Energie Atomique et aux Energies Alternatives on May 19 for "Process for fabricating an optoelectronic device comprising a germanium-on-silicon photodiode optically coupled to an integrated Si 3 N 4 waveguide" (French Inventor)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,631,824, issued on May 19, was assigned to Commissariat a l'Energie Atomique et aux Energies Alternatives (Paris).

"Process for fabricating an optoelectronic device comprising a germanium-on-silicon photodiode optically coupled to an integrated Si 3 N 4 waveguide" was invented by Bertrand Szelag (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A process for fabricating an optoelectronic device having a germanium-on-silicon photodiode coupled to an Si3N4 waveguide includes producing a semiconductor substrate having a semiconductor stack of thin layers configured to form segments of a semiconductor structure of the photodiode, producing a p...