US Patent Issued to Commissariat a l'Energie Atomique et aux Energies Alternatives on May 12 for "Image sensor having low parasitic light sensitivity" (French Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,447, issued on May 12, was assigned to Commissariat a l'Energie Atomique et aux Energies Alternatives (Paris).

"Image sensor having low parasitic light sensitivity" was invented by Olivier Saxod (Grenoble, France) and Francois Ayel (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "An image sensor comprising a plurality of pixels formed inside and on top of a semiconductor substrate, each pixel comprising: a photosensitive area formed in the semiconductor substrate; a storage area formed in the semiconductor substrate; and a first transistor of transfer between the photosensitive area and the storage area, wherein the first transfer tra...