US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on March 24 for "1TIR memory with a 3D structure" (French Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,220, issued on March 24, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"1TIR memory with a 3D structure" was invented by Sylvain Barraud (Grenoble Cedex, France) and Francois Andrieu (Grenoble Cedex, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory is structured in lines and columns over several superimposed levels. Each level includes an array of memory elements and gate-all-around access transistors, each transistor including a semiconductor nanowire and each gate being insulated from the gates of the other levels. The memory also includes conductive portions, each crossing at least two leve...