US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on July 7 for "Electronic component based on p-doped gallium nitride" (French Inventor)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,436, issued on July 7, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"Electronic component based on p-doped gallium nitride" was invented by Erwan Morvan (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electronic component includes a substrate, an active stack formed above the substrate and including: a layer of p-type doped Gallium Nitride GaN, disposed above the substrate, and a layer of a semiconductor material disposed on the layer of p-type doped Gallium Nitride GaN; the component including two side zones located on either side of the layer of p-type doped GaN, the two side zones bein...