ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,616, issued on Jan. 27, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).
"Light emitting diode with optimised electric injection from a side electrode" was invented by David Vaufrey (Grenoble, France), Tony Maindron (Grenoble, France) and Corentin Le Maoult (Grenoble, France).
According to the abstract* released by the U.S. Patent & Trademark Office: "A light-emitting diode comprising: a first electrode; a first layer of semiconductor doped to a first conductivity type; a second layer of semiconductor doped to a second conductivity type; a region of radiative recombination arranged between, or at the interface of, the first and second layers...