US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on Jan. 13 for "Microelectronic device with two field-effect transistors having a common electrode" (French Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,082, issued on Jan. 13, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"Microelectronic device with two field-effect transistors having a common electrode" was invented by Sylvain Barraud (Grenoble, France) and Joris Lacord (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic device includes a first transistor having a first drain and a first source, a first doped zone constituting one from among the first drain and the first source, a second doped zone constituting the other from among the first drain and the first source, a second transistor comprising a second drain and a seco...