US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on Feb. 10 for "Field effect transistor with p-FET type behaviour" (French Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,399, issued on Feb. 10, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris).

"Field effect transistor with p-FET type behaviour" was invented by Julien Buckley (Grenoble, France), Rene Escoffier (Grenoble, France), Cyrille Le Royer (Grenoble, France) and Blend Mohamad (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A field effect transistor includes a substrate; an electron channel layer disposed on the substrate; a barrier layer disposed on the electron channel layer; a hole channel layer disposed on the barrier layer; a p-type doped semiconductor material layer disposed on the hole channel layer;...