US Patent Issued to CITY UNIVERSITY OF HONG KONG on March 31 for "Gate driving circuit with switched-capacitor circuit to generate negative gate-source voltage pulses" (Chinese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,592,693, issued on March 31, was assigned to CITY UNIVERSITY OF HONG KONG (Kowloon, Hong Kong).

"Gate driving circuit with switched-capacitor circuit to generate negative gate-source voltage pulses" was invented by Ho Tin Tang (Tsuen Wan, Hong Kong) and Shu Hung Henry Chung (Mid-Levels, Hong Kong).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus for driving a MOSFET, which includes a first gate driver adapted to generate a driving signal for a MOSFET, a switched capacitor circuit connected to the first gate driver and adapted to generate temporarily a negative voltage to counteract a spurious voltage occurred at the first gate driver; and a s...