US Patent Issued to City University of Hong Kong on July 14 for "Film of graphitic carbon nitride for photoanode and a method for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,680,182, issued on July 14, was assigned to City University of Hong Kong (Kowloon, Hong Kong).

"Film of graphitic carbon nitride for photoanode and a method for forming the same" was invented by Ruiqin Zhang (Kowloon, Hong Kong), May Thawda Oo (Kowloon, Hong Kong) and Yanling Zhao (Kowloon, Hong Kong).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a film of graphitic carbon nitride (g-CN) by way of thermal vapor condensation comprising the steps of: a) providing a solid-phase thiourea precursor and a solid-phase melamine precursor in a container; b) covering the container with a first substrate; and c) thermally generating a vapor-ph...