US Patent Issued to Cirrus Logic on Aug. 25 for "Multi-level memristor elements" (British Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,766, issued on Aug. 25, was assigned to Cirrus Logic Inc. (Austin, Texas).

"Multi-level memristor elements" was invented by John P. Lesso (Edinburgh, Great Britain) and James T. Deas (Edinburgh, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is described a two-terminal multi-level memristor element synthesised from binary memristors, which is configured to implement a variable resistance based on unary or binary code words. There is further described a circuit such as a synapse circuit implemented using a multi-level memristor element."

The patent was filed on March 11, 2024, under Application No. 18/600,957.

*For further infor...