US Patent Issued to CHONGQING KONKA PHOTOELECTRIC TECHNOLOGY RESEARCH INSTITUTE on May 12 for "Light-emitting diode epitaxial structure and manufacturing method thereof, and light-emitting diode device" (Chinese Inventor)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,470, issued on May 12, was assigned to CHONGQING KONKA PHOTOELECTRIC TECHNOLOGY RESEARCH INSTITUTE Co. LTD. (Chongqing, China).

"Light-emitting diode epitaxial structure and manufacturing method thereof, and light-emitting diode device" was invented by Zhongshan Feng (Chongqing, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A light-emitting diode (LED) epitaxial structure, an LED device, and a manufacturing method of an LED epitaxial structure are provided. The LED epitaxial structure 100 includes an n-type confinement layer 20, an n-type waveguide layer 30, a light-emitting layer 40, a p-type waveguide layer 50, and a p-type confinement layer...