US Patent Issued to CHONGQING ALPHA AND OMEGA SEMICONDUCTOR on May 19 for "Device integrating trench type power device and source capacitor and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,254, issued on May 19, was assigned to CHONGQING ALPHA AND OMEGA SEMICONDUCTOR Ltd. (Chongqing, China).

"Device integrating trench type power device and source capacitor and manufacturing method thereof" was invented by Yi Zhao (Chongqing, China) and Liang Shi (Chongqing, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device integrating a trench type power device and a source capacitor and a manufacturing method of the device integrating the trench type power device and the source capacitor are provided, which relate to a technical field of manufacturing power semicondutor devices. The manufacturing method includes steps of preparing a cellul...